savantic semiconductor product specification silicon pnp power transistors MJE170/171/172 d escription with to-126 package complement to type mje180/181/182 applications for low power audio amplifier and low current, high speed switching applications pinning (see fig.2) pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(t c =25 ) symbol parameter conditions value unit MJE170 -60 mje171 -80 v cbo collector-base voltage mje172 open emitter -100 v MJE170 -40 mje171 -60 v ceo collector-emitter voltage mje172 open base -80 v v ebo emitter-base voltage open collector -7 v i c collector current -3 a i cm collector current-peak -6 a i b base current -1 a t a =25 1.5 p c collector power dissipation t c =25 12.5 w t j junction temperature 150 t stg storage temperature -65~150
savantic semiconductor product specification 2 silicon pnp power transistors MJE170/171/172 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit MJE170 -40 mje171 -60 v (br)ceo collector-emitter breakdown voltage mje172 i c =-10ma;i b =0 -80 v v ce (sat) -1 collector-emitter saturation voltage i c =-500ma ;i b =-50ma -0.3 v v ce (sat) -2 collector-emitter saturation voltage i c =-1.5a ;i b =-150ma -0.9 v v ce ( sat) -3 collector-emitter saturation voltage i c =-3a ;i b =-600ma -1.7 v v be (sat) -1 base-emitter saturation voltage i c =-1.5a ;i b =-150ma -1.5 v v be (sat) -2 base-emitter saturation voltage i c =-3a ;i b =-600ma -2.0 v v be base-emitter on voltage i c =-500ma ; v ce =-1v -1.2 v MJE170 v cb =-60v; i e =0 t c =150 -0.1 -0.1 a ma mje171 v cb =-80v; i e =0 t c =150 -0.1 -0.1 a ma i cbo collector cut-off current mje172 v cb =-100v; i e =0 t c =150 -0.1 -0.1 a ma i ebo emitter cut-off current v eb =-7v; i c =0 -0.1 a h fe-1 dc current gain i c =-100ma ; v ce =-1v 50 250 h fe-2 dc current gain i c =-500ma ; v ce =-1v 30 h fe-3 dc current gain i c =-1.5a ; v ce =-1v 12 f t transition frequency i c =-100ma ; v ce =-10v 50 mhz c ob output capacitance i e =0 ; v cb =-10v,f=0.1mhz 50 pf
savantic semiconductor product specification 3 silicon pnp power transistors MJE170/171/172 package outline fig.2 outline dimensions
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